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Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

The OR-3H7-4 series device contains four infrared led and four photo transistor detector. They are encapsulated in a 16-pin SOP, free of halogens and Sb2O3

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Product Description

Optocoupler 3H7

Features

(1) 4N2X series: 4N25, 4N26, 4N27, 4N28;4N3X series: 4N35, 4N36, 4N37, 4N38

High isolation voltage between input and output (Viso=5000 V rms)
Creepage distance >7.62 mm
Operating temperature up to +115°C
Compact dual-in-line package
ESD pass HBM 8000V/MM 2000V
Safety approval

UL approved(No.E323844)

VDE approved(No.40029733)

CQC approved (No.CQC19001231480 )

In compliance with RoHS, REACH standards.
MSL Class Ⅰ

Instructions

The 4N2X, 4N3X, series of devices each consist of an infrared emitting diode

optically coupled to a photo transistor.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

Application Range

Power supply regulators
Digital logic inputs
Microprocessor inputs

Functional Diagram

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

Max Absolute rated Value (Normal Temperature=25℃)

Parameter		Symbol	Rated Value	Unit
Input	Forward Current	IF	60	mA
	Junction Temperature	TJ	125	℃
	Reverse Voltage	VR	6	V
	Power dissipation (T A = 25°C) Derating factor (above 100°C)	PD	100	mW
		PD	3.8	mW/°C
Output	Collector-emitter Voltage	VCEO	80	V
	Collector-Base voltage	VCBO	80
	Emitter-Collector voltage	VECO	7
	Emitter-Base voltage	VEBO	7
	Power dissipation (T A = 25°C) Derating factor (above 100°C)	PC	150	mW
		PC	9.0	mW/°C
Total Consume Power		Ptot	200	mW
*1 Insulation Voltage		Viso	5000	Vrms
Working Temperature		Topr	-55 to + 115	℃
Deposit Temperature		TSTG	-55 to + 150
*2 Soldering Temperature		TSOL	260

*1. AC Test, 1 minute, humidity = 40~60% Insulation test method as below:

Short circuit both terminals of photocoupler.
No Current when testing insulation voltage.
Adding sine wave voltage when testing

*2. soldering time is 10 seconds.

Opto-electronic Characteristics

Parameter			Symbol	Min	Typ.*	Max	Unit	Condition
Input	Forward Voltage		VF	---	1.2	1.5	V	IF=10mA
	Reverse Current		IR	---	---	10	μA	VR=6V
	Collector capacitance		Cin	---	30	---	pF	V=0, f=1MHz
Output	Collector-Base dark current		ICBO	---	---	20	nA	VCB=10V
	Collector to emitter Current	4N2X	ICEO	---	---	50	nA	VCE=10V, IF=0mA
	Collector to emitter Current	4N3X	ICEO	---	---	50	nA	VCE= 60V, IF=0mA
	Collector-Emitter attenuation Voltage		BVCEO	80	---	---	V	IC=1mA
	Collector-Base breakdown voltage		BVCBO	80				IC=0.1mA
	Emitter-Collector attenuation Voltage		BVECO	7	---	---	V	IE=0.1mA
	Emitter-Base breakdown voltage		BVEBO	7				IE=0.1mA
Transforming Characteristics	Current Transfer ratio	4N35, 4N36,4N37	CTR	100	---	---	%	IF=10mA VCE=10V
		4N25, 4N26,4N38		20	---	---
		4N27, 4N28		10	---	---
	Collector and Emitter Saturation Voltage	4N25, 4N26,4N27, 4N28	VCE(sat)	---	---	0.5	V	IF=50mA IC=2mA
		4N35, 4N36,4N37		---	---	0.3		IF=10mA, IC=0.5mA
		4N38		---	---	1.0		IF=20mA, IC=4mA
	Isolation resistance		Riso	1011	---	---	Ω	DC500V 40~60%R.H.
	Floating Capacitance		Cf	---	0.2	---	pF	V=0, f=1MHz
	Response Time		tr	---	3	10	μs	VCC=10V, IC=10mA RL=100Ω
	Descend Time		tf	---	6	10	μs	VCC=10V, IC=10mA RL=100Ω

Current Conversion Ratio = IC / IF × 100%

Order Information

Part Number

OR-4NXXU-Y-Z

Note

4NXX = Part Number, 4N25,4N26,4N27,4N28,4N35,4N36,4N37 or 4N38.

U = Lead form option (S, M or None)

Y = Tape and reel option (TA,TA1 or none).

Z = ‘V’ code for VDE safety (This options is not necessary).

* VDE Code can be selected.

Option	Description	Packing quantity
None	Standard DIP-6	66 units per tube
M	Wide lead bend (0.4 inch spacing)	66 units per tube
S(TA)	Surface mount lead form (low profile) + TA tape & reel option	1000 units per reel
S(TA1)	Surface mount lead form (low profile) + TA1 tape & reel option	1000 units per reel

Naming Rule

1. Manufacturer : ORIENT.

2. Part Number : 4N25,4N26,4N27,4N28,4N35,4N36,4N37 or 4N38.

Year Code ： '21' means '2021' and so on.
Week Code ： 01 means the first week, 02 means the second week and so on.
VDE Code . (Optional)
Anode.

Outer Dimension

OR-4NXX

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

OR-4NXXM

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

OR-4NXXS

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

Recommended Foot Print Patterns (Mount Pad)

unit：mm

Taping Dimensions

OR-4NXXS-TA

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

OR-4NXXS-TA1

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

Description	Symbol	Dimension in mm(inch)
Tape wide	W	16±0.3（0.63）
Pitch of sprocket holes	P0	4±0.1（0.15）
Distance of compartment	F	7.5±0.1（0.295）
Distance of compartment	P2	2±0.1（0.079）
Distance of compartment to compartment	P1	12±0.1（0.472）

Package Type	TA/TA1
Quantities(pcs)	1000

Package Dimension

DIP/M type

Packing Information
Packing type	Tube
Qty per Tube	66pcs
Small box (Inner) Dimension	52512860mm
Large box (Outer) Dimension	545290335mm
The Amount per Inner Box	3,300pcs
The Amount per Outer Box	33,000pcs

SOP type

Packing Information
Packing type	Reel type
Tape Width	16mm
Qty per Reel	1,000pcs
Small box (inner) Dimension	34534558.5mm
Large box (Outer) Dimension	620x360x360mm
Max qty per small box	2,000pcs
Max qty per large box	20,000pcs

Packing Label Sample

Consume Grade Phototransistor Optocoupler OR-3H7-EN-V13

Note：

Material Code :Product ID.
P/N :Contents with "Order Information" in the specification.
Lot No. :Product data.
D/C :Product weeks.
Quantity :Packaging quantity.

Reliability Test

Temperature Profile Of Soldering

(1) IR Reflow soldering (JEDEC-STD-020C compliant)

One time soldering reflow is recommended within the condition of temperature and time profile shown below. Do not solder more than three times.

Profile item	Conditions
Preheat Temperature Min (T Smin ) Temperature Max (T Smax ) - Time (min to max) (ts)	150˚C 200˚C 90±30 sec
Soldering zone - Temperature (TL ) - Time (t L )	217˚C 60 sec
Peak Temperature	260˚C
Peak Temperature time	20 sec
Ramp-up rate	3˚C / sec max.
Ramp-down rate from peak temperature	3~6˚C / sec
Reflow times	≤3