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Darlington Optocoupler OR-4NXX_OR-TIL113(Darlington)-EN-V3

The TIL113, 4NXX series of devices each consist of an infrared emitting diode optically coupled to a darlington detector.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

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Product Description

Darlington Optocoupler

Darlington Optocoupler OR-4NXX_OR-TIL113(Darlington)-EN-V3

Features

(1) 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 TIL113 series: TIL113.

(2) High isolation voltage between input and output (Viso=5000 V rms)

(3) Creepage distance >7.62 mm

(4) Operating temperature up to +115°C

(5) Compact dual-in-line package

(6) Safety approval

UL approved(No.E323844)

VDE approved(No.40029733)

CQC approved (No.CQC19001231480 )

(7) In compliance with RoHS, REACH standards.

(8) MSL Class Ⅰ

Instructions

The TIL113, 4NXX series of devices each consist of an infrared emitting diode optically coupled to a darlington detector.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

Application Range

Low power logic circuits
Telecommunications equipment
Portable electronics
Interfacing coupling systems of different potentials and impedances

Max Absolute rated Value (Normal Temperature=25℃)

Parameter		Symbol	Rated Value	Unit
Input	Forward Current	IF	60	mA
	Junction Temperature	TJ	125	℃
	Reverse Voltage	VR	6	V
	Power dissipation (TA = 25°C) Derating factor (above 100°C)	PD	120	mW
	Power dissipation (TA = 25°C) Derating factor (above 100°C)	PD	3.8	mW/°C
Output	Collector-emitter Voltage	VCEO	80	V
	Collector-Base voltage	VCBO	80
	Emitter-Collector voltage	VECO	7
	Emitter-Base voltage	VEBO	7
	Power dissipation (T A = 25°C) Derating factor (above 100°C)	PC	150	mW
		PC	6.5	mW/°C
Total Consume Power		Ptot	200	mW
*1 Insulation Voltage		Viso	5000	Vrms
Working Temperature		Topr	-55 to + 115	℃
Deposit Temperature		TSTG	-55 to + 150
*2 Soldering Temperature		TSOL	260

*1. AC Test, 1 minute, humidity = 40~60% Insulation test method as below:

1. Short circuit both terminals of photocoupler.
2. Current when testing insulation voltage.
3. Adding sine wave voltage when testing

*2. soldering time is 10 seconds.

Opto-electronic Characteristics

Parameter			Symbol	Min	Typ.*	Max	Unit	Condition
Input	Forward Voltage		VF	---	1.2	1.5	V	IF=10mA
	Reverse Current		IR	---	---	10	μA	VR=6V
	Collector capacitance		Cin	---	50	---	pF	V=0, f=1MHz
Output	Collector-Base dark Current		ICBO	---	---	20	nA	VCB=10V
	Collector to emitter Current		ICEO	---	---	100	nA	VCE=10V, IF=0mA
	Collector-Emitter attenuation Voltage		BVCEO	55	---	---	V	IC=1mA
	Collector-Base breakdown Voltage		BVCBO	55	---	---	V	IC=0.1mA
	Emitter-Collector attenuation Voltage		BVECO	7	---	---	V	IE=0.1mA
TransformingCharacteristic s	Current Transfer ratio	4N32,4N33	CTR	500	---	---	%	IF=10mA VCE=10V
		4N29,4N30		100	---	---
		4N31		50	---	---
		TIL113		300	---	---		IF=10mAVCE=1V
	Collector and Emitter Saturation Voltage	4N29, 4N30, 4N32,4N33	VCE(sat)	---	---	1.0	V	IF=8mA IC=2mA
	Collector and Emitter Saturation Voltage	4N31,TIL113	VCE(sat)	---	---	1.2	V	IF=8mA, IC=2mA
	Isolation Resistance		Riso	1011	---	---	Ω	DC500V 40~60%R.H.
	Input-output Capacitance		CIO	---	0.8	---	pF	VIO=0, f=1MHz
	Response Time		tr	---	3	10	μs	VCC=10V, IC=10mARL=100Ω
	Descend Time		tf	---	6	10	μs	VCC=10V, IC=10mARL=100Ω

Current Conversion Ratio = IC / IF × 100%

Order Information

Part Number

OR-4NXXY-Z-W

or OR-TIL113Y-Z-W

Note

4NXX = Part Number (4N29,4N30,4N31,4N32 or 4N33)

TIL113= Part Number

Y = Lead form option (S, M or None)

Z = Tape and reel option (TA,TA1 or none).

W= ‘V’code for VDE safety (This options is not necessary).

*VDE Code can bes elected.

Option	Description	Packing quantity
None	Standard DIP-6	66 units per tube
M	Wide lead bend (0.4 inch spacing)	66 units per tube
S(TA)	Surface mount lead form (low profile) + TA tape & reel option	1000 units per reel
S(TA1)	Surface mount lead form (low profile) + TA1 tape & reel option	1000 units per reel